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| BZX384-V-Series Vishay Semiconductors Small Signal Zener Diodes Features * Silicon Planar Power Zener Diodes * The Zener voltages are graded according e3 to the international E 24 standard * Standard Zener voltage tolerance is 5 %; Replace "C" with "B" for 2 % tolerance * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 20145 Mechanical Data Case: SOD323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Power dissipation 1) Test condition Symbol Ptot Value 2001) Unit mW Device on fiberglass substrate Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 6501) 150 - 65 to + 150 Unit K/W C C Valid that electrodes are kept at ambient temperature Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 1 BZX384-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Zener Voltage Code Range VZ at IZT1 V min BZX384C2V4-V BZX384C2V7-V BZX384C3V0-V BZX384C3V3-V BZX384C3V6-V BZX384C3V9-V BZX384C4V3-V BZX384C4V7-V BZX384C5V1-V BZX384C5V6-V BZX384C6V2-V BZX384C6V8-V BZX384C7V5-V BZX384C8V2-V BZX384C9V1-V BZX384C10-V BZX384C11-V BZX384C12-V BZX384C13-V BZX384C15-V BZX384C16-V BZX384C18-V BZX384C20-V BZX384C22-V BZX384C24-V BZX384C27-V BZX384C30-V BZX384C33-V BZX384C36-V BZX384C39-V BZX384C43-V BZX384C47-V BZX384C51-V BZX384C56-V BZX384C62-V BZX384C68-V BZX384C75-V (1) Dynamic Resistance Test Current IZT1 mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Temperature Test Coefficient of Current Zener Voltage VZ at IZT1 10 /C min -9 -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 9 9 10 10 max -4 -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 11 12 12 12 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 -4 Reverse Leakage Current IR at VR A 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 V 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. rzj at IZT1 typ 70 ( 100) 75 ( 100) 80 ( 95) 85 ( 95) 85 ( 90) 85 ( 90) 80 ( 90) 50 ( 80) 40 ( 60) 15 ( 40) 6.0 ( 10) 6.0 ( 15) 6.0 ( 15) 6.0 ( 15) 6.0 ( 15) 8.0 ( 20) 10 ( 20) 10 ( 25) 10 ( 30) 10 ( 30) 10 ( 40) 10 ( 45) 15 ( 55) 20 ( 55) 25 ( 70) 25 ( 80) 30 ( 80) 35 ( 80) 35 ( 90) 40 ( 130) 45 ( 150) 50 ( 170) 60 ( 180) 70 ( 200) 80 ( 215) 90 ( 240) 95 ( 255) rzj at IZT2 typ 275 300 ( 600) 325 ( 600) 350 ( 600) 375 ( 600) 400 ( 600) 410 ( 600) 425 ( 500) 400 ( 480) 80 ( 400) 40 ( 150) 30 ( 80) 30 ( 80) 40 ( 80) 40 ( 100) 50 ( 150) 50 ( 150) 50 ( 150) 50 ( 170) 50 ( 200) 50 ( 200) 50 ( 225) 60 ( 225) 60 ( 250) 60 ( 250) 65 ( 300) 70 ( 300) 75 ( 325) 80 ( 350) 80 ( 350) 85 ( 375) 85 ( 375) 85 ( 400) 100 ( 425) 100 ( 450) 150 ( 475) 170 ( 500) at IZT2 mA max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 Measured with pulses tp = 5 ms www.vishay.com 2 Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Zener Voltage Code Range VZ at IZT1 V min BZX384B2V4-V BZX384B2V7-V BZX384B3V0-V BZX384B3V3-V BZX384B3V6-V BZX384B3V9-V BZX384B4V3-V BZX384B4V7-V BZX384B5V1-V BZX384B5V6-V BZX384B6V2-V BZX384B6V8-V BZX384B7V5-V BZX384B8V2-V BZX384B9V1-V BZX384B10-V BZX384B11-V BZX384B12-V BZX384B13-V BZX384B15-V BZX384B16-V BZX384B18-V BZX384B20-V BZX384B22-V BZX384B24-V BZX384B27-V BZX384B30-V BZX384B33-V BZX384B36-V BZX384B39-V BZX384B43-V BZX384B47-V BZX384B51-V BZX384B56-V BZX384B62-V BZX384B68-V BZX384B75-V W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50.0 54.9 60.8 66.6 73.5 max 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52.0 57.1 63.2 69.4 76.5 Dynamic Resistance Test Current IZT1 mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Temperature Test Coefficient of Current Zener Voltage VZ at IZT1 10 /C min -9 -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 9 9 10 10 max -4 -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 11 12 12 12 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. -4 Reverse Leakage Current IR at VR A V rzj at IZT1 typ 70 ( 100) 75 ( 100) 80 ( 95) 85 ( 95) 85 ( 90) 85 ( 90) 80 ( 90) 50 ( 80) 40 ( 60) 15 ( 40) 6.0 ( 10) 6.0 ( 15) 6.0 ( 15) 6.0 ( 15) 6.0 ( 15) 8.0 ( 20) 10 ( 20) 10 ( 25) 10 ( 30) 10 ( 30) 10 ( 40) 10 ( 45) 15 ( 55) 20 ( 55) 25 ( 70) 25 ( 80) 30 ( 80) 35 ( 80) 35 ( 90) 40 ( 130) 45 ( 150) 50 ( 170) 60 ( 180) 70 ( 200) 80 ( 215) 90 ( 240) 95 ( 255) rzj at IZT2 typ 275 300 ( 600) 325 ( 600) 350 ( 600) 375 ( 600) 400 ( 600) 410 ( 600) 425 ( 500) 400 ( 480) 80 ( 400) 40 ( 150) 30 ( 80) 30 ( 80) 40 ( 80) 40 ( 100) 50 ( 150) 50 ( 150) 50 ( 150) 50 ( 170) 50 ( 200) 50 ( 200) 50 ( 225) 60 ( 225) 60 ( 250) 60 ( 250) 65 ( 300) 70 ( 300) 75 ( 325) 80 ( 350) 80 ( 350) 85 ( 375) 85 ( 375) 85 ( 400) 100 ( 425) 100 ( 450) 150 ( 475) 170 ( 500) atIZT2 mA Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 3 BZX384-V-Series Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified mA 103 102 1000 5 4 3 2 TJ = 25 C IF 10 1 10-1 10-2 10-3 10-4 10-5 0 18114 TJ = 100 C rzj 100 TJ = 25 C 5 4 3 2 100 5 4 3 2 2.7 3.6 4.7 5.1 5.6 0.2 0.4 0.6 0.8 1V 1 0.1 18117 2 5 1 2 5 10 IZ 2 5 100 mA VF Figure 1. Forward characteristics Figure 4. Dynamic Resistance vs. Zener Current mW 250 pF 1000 7 5 4 3 2 Tj = 25 C 200 Ctot VR = 1 V VR = 2 V Ptot 150 100 100 7 5 4 VR = 1 V VR = 2 V 50 3 2 0 0 18192 10 100 200 C 1 18193 2 3 45 10 2 345 100 V Tamb VZ Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Capacitance vs. Zener Voltage C/W 103 7 5 4 3 2 100 TJ = 25 C 0.5 0.2 0.1 0.05 0.02 0.01 =0 5 4 rthA 102 7 5 4 3 2 rzj 3 2 33 27 22 18 15 12 10 6.8/8.2 6.2 10 5 4 10 7 5 4 3 2 tp 3 tp T T PI 2 1 10-5 18116 1 1 10s 10-4 10-3 10-2 10-1 0.1 18119 2 5 1 2 5 tp 10 IZ 2 5 100 mA Figure 3. Pulse Thermal Resistance vs. Pulse Duration Figure 6. Dynamic Resistance vs. Zener Current www.vishay.com 4 Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors 103 7 5 4 Tj = 25 C mV/C 25 rzj 3 2 47 + 51 43 39 36 VZ Tj 20 15 10 5 0 -5 IZ = 5 mA 1 mA 20 mA 102 7 5 4 3 2 10 0.1 18120 2 3 45 1 2 345 10 mA 1 18135 2 3 45 10 2 345 100 V IZ Figure 7. Dynamic Resistance vs. Zener Current VZ at IZ = 5 mA V 27 V, I = 2 mA Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage V 0.8 103 5 4 3 2 rzth = RthA x VZ x VZ Tj VZ 25 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VZ at IZ = 5 mA 15 10 rzth 102 5 4 3 2 8 7 6.2 5.9 5.6 5.1 3.6 4.7 10 5 4 3 2 negative positive -1 - 0.2 2 345 1 1 18121 2 3 45 10 100 V 0 18124 20 40 60 80 100 120 140 C VZ at IZ = 5 mA Tj Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature 100 7 5 4 V 9 8 7 VZ at IZ = 2 mA 51 rzj 3 2 VZ 6 5 10 7 5 4 3 2 4 3 2 1 Tj = 25 C IZ = 5 mA 43 36 0 -1 1 1 18122 2 3 45 IZ = 2 mA 0 20 40 60 80 100 120 140 C 10 2 345 100 V VZ 18194 Tj Figure 9. Dynamic Resistance vs. Zener Voltage Figure 12. Change of Zener Voltage vs. Junction Temperature Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 5 BZX384-V-Series Vishay Semiconductors mV/C 100 IZ = 5 mA mA 50 Tj = 25 C 2.7 3.3 3.9 4.7 5.6 6.8 8.2 VZ Tj 80 40 lz 30 60 40 20 Test Current IZ 5 mA 20 10 0 0 0 18195 20 40 60 80 100 V 0 18111 1 2 3 4 5 6 7 8 9 10 V VZ at IZ = 2 mA VZ Figure 13. Temperature Dependence of Zener Voltage vs. Zener Voltage V 1.6 1.4 1.2 mA 30 Figure 16. Breakdown Characteristics VZ VZ = rzth x IZ IZ = 5 mA VZ 27 V; IZ = 2 mA 10 12 Tj = 25 C 1 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 1 18196 2 3 45 lz 20 15 18 22 10 27 Test Current IZ 5 mA 33 36 0 10 2 345 100 V 0 18112 10 20 30 40 V VZ at IZ = 5 mA VZ Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage V 5 mA 10 Figure 17. Breakdown Characteristics VZ = rzth x IZ lz Tj = 25 C 39 51 47 4 8 VZ 3 IZ = 5 mA 43 6 2 4 Test Current IZ 2 mA 1 IZ = 2.5 mA 2 0 0 0 18160 20 40 60 80 100 V 0 18191 10 20 30 40 50 60 70 80 90 100 V VZ at IZ = 5 mA VZ Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage Figure 18. Breakdown Characteristics www.vishay.com 6 Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors Package Dimensions in mm (Inches): SOD323 1.15 (0.045) 0.8 (0.031) 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) cathode bar foot print recommendation: 0.6 (0.024) 0.1 (0.004) max 0.15 (0.006) 0.10 (0.004) 0.6 (0.024) 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 Document Number 85764 Rev. 1.6, 17-May-06 1.5 (0.059) 1.1 (0.043) 1.6 (0.063) 0.6 (0.024) www.vishay.com 7 BZX384-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85764 Rev. 1.6, 17-May-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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